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 | Voltage stress-induced performance degradation in NMOSFET mixer
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| | 1) University of Central Florida
2) Freescale Systems
3) University of Texas at Arlington |
| (Received: January 18, 2005)
(Accepted for publication: February 3, 2005)
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| Abstract:
This paper presents an insight into the performance degradation in Gilbert mixer due to the voltage stress-induced hot carrier effects. Analytical analysis relates the performance degradation with the model parameter shifts caused by voltage stress. The stress-induced parameter shifts are examined experimentally. Performance degradation in mixer is investigated through Spectre-RF simulation with the models extracted from measured data. |
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| To cite this article: | | C. Yu, H. Yang, E. Xiao and J. S. Yuan, “Voltage stress-induced performance degradation in NMOSFET mixer”, IEICE Electron. Express, Vol. 2, No. 5, pp.133-137, (2005) . | |
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| doi:10.1587/elex.2.133 | | JOI JST.JSTAGE/elex/2.133 |
| Copyright (c) 2005 by The Institute of Electronics, Information and Communication Engineers |
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