We are involved in complete removal of VOC (volatile organic compounds) by the use of thermally generated holes in oxide semiconductors. In the present investigation, we have studied VOC decomposition characteristics of Cr
2O
3+x (0<
x<1) in a fluidized bed system, as well as in a honeycomb-like cartridge system which includes 15 mesh disks coated with Cr
2O
3 powders. In both systems, Cr
2O
3+x is found to exhibit an excellent decomposition characteristic which even exceeds that of the TiO
2 system, although the specific surface of Cr
2O
3+x (3m
2/g) is only 1/100 of powdered TiO
2 (298m
2/g).
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