Provider: Japan Science and Technology Agency Database: J-STAGE Content:text/plain; charset="utf-8" TY - JOUR TI - Crystal Nucleation Behavior Caused by Annealing of SiC Irradiated with Ne at Liquid Nitrogen Temperature or at 573 K TI - AU - Aihara,Jun AU - Hojou,Kiichi AU - Furuno,Shigemi AU - Hojo,Tomohiro AU - Sawa,Kazuhiro AU - Yamamoto,Hiroyuki AU - Motohashi,Yoshinobu JO - MATERIALS TRANSACTIONS VL - 48 IS - 7 SP - 1896 EP - 1900 PY - 2007 DO - 10.2320/matertrans.MRA2007608 ER -