2012 年 132 巻 3 号 p. 48-52
The characteristics of silicon films deposited at 700 Torr by plasma enhanced chemical transport were investigated. The Si films were poly-crystalline, and the hall mobility was 1.9 cm2/Vs. These results indicate that our Si films are comparable with poly-crystalline Si deposited by conventional plasma enhanced CVD. We fabricated a strain gauge sensor using our silicon film. The output voltage showed a good linearity to the pressure.
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