This study investigates the analysis of chemical mechanical polishing (CMP) mechanism by using the “mieruka” (visualization) technique of the contact interface between the wafer and the polishing pad when the suede type polishing pad was used in CMP. In particular, as mentioned previous our study, we clarified the linear velocity ratio, defined as the ratio of slurry flow velocity to pad linear velocity, has remarkably effect on the removal rate and contact interface behavior between the wafer and polishing pad. This paper scientifically investigates the relationship between the linear velocity ratio and contact interface behavior from the viewpoints of number of pores which is important property of the suede type polishing pad. As a result, the linear velocity ratio is effective parameter for making the optimized contact interface and stability of removal rate during CMP.