論文
電流狭窄型CPP-GMR素子におけるパルス電流によるナノピンホール構造制御
2011 年 35 巻 1 号 p. 7-10
詳細
2011 年 35 巻 1 号 p. 7-10
We investigated how to control the nano-pinhole structure of a confined-current-path current-perpendicular-to-plane giant magnetoresistive (CCP-CPP GMR) sensor by inducing pulse current. We found an improved MR ratio with reduced sensor resistance by applying an optimal pulse current. This was assumed to be due to the enlarged nano-pinhole area and reduced pinhole resistance. When excessive pulse current was applied, the MR ratio and sensor resistance decreased because the CPP-GMR sensor degraded thermally.
