A 1.2mV ripple, 4.5V charge pump using controllable pumping current technology

Cece Huang; Yu Wang; Teng Chen; Liyin Fu; Qi Wang; Zongliang Huo

doi:10.1587/elex.14.20170699

This article has now been updated. Please use the final version.

A 1.2mV ripple, 4.5V charge pump using controllable pumping current technology

Cece Huang, Yu Wang, Teng Chen, Liyin Fu, Qi Wang, Zongliang Huo

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Keywords: charge pump, CPC, small ripple, flash memory

JOURNAL FREE ACCESS Advance online publication

Article ID: 14.20170699

DOI https://doi.org/10.1587/elex.14.20170699

The final version of this article is now available: Vol. 14 (2017), No. 18 pp. 20170699-20170699

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Abstract

This paper represents a 4.5V regulated charge pump with extremely small ripple. The pump designed with Voltage Doubler (VD) significantly reduces the output ripple voltage. In addition, this circuit utilizes a controllable pumping current (CPC) technology, which achieves automatically adjusting output current by feedback mechanism and resizing transfer transistors. The proposed charge pump has been demonstrated in 0.32µm 3D NAND periphery technology under 3V power supply. Simulation results show that the output ripple voltage is 1.2mV at 5mA load current with 0.1µF load capacitance. The maximum current drivability and power efficiency is 8mA and 81% respectively.

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