A radiation harden enhanced Quatro (RHEQ) SRAM cell

Chunyu Peng; Ziyang Chen; Jingbo Zhang; Songsong Xiao; Changyong Liu; Xiulong Wu; Zhiting Lin

doi:10.1587/elex.14.20170784

This article has now been updated. Please use the final version.

A radiation harden enhanced Quatro (RHEQ) SRAM cell

Chunyu Peng, Ziyang Chen, Jingbo Zhang, Songsong Xiao, Changyong Liu, Xiulong Wu, Zhiting Lin

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Keywords: radiation-hardened SRAM, single event upset, single-event multiple-node upsets, static noise margin, lower power consumption

JOURNAL FREE ACCESS Advance online publication

Article ID: 14.20170784

DOI https://doi.org/10.1587/elex.14.20170784

The final version of this article is now available: Vol. 14 (2017), No. 18 pp. 20170784-20170784

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Abstract

This paper intends to present a novel radiation-hardened SRAM cell by using the PMOS transistors stacked (each PMOS is split into two same sizes) and changing the inner topological structure on basis of the Quatro-10T. Combined with layout-level optimization design, the 3-D TCAD mixed-mode simulation results show that the novel design has a great single event upset (SEU) immune. Simultaneously, it is found to be tolerant of partial single-event multiple-node upsets (SEMNUs) due to the charge sharing among off-PMOS transistors. In addition, compared with the Quatro-10T, our proposed structure exhibits larger static noise margin (SNM) as well as lower power consumption in 65nm COMS technology.

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