A RC-IGBT with Built-in Free Wheeling Diode Controlled by MOSFET

Weizhong Chen; Qiao Guo; Lijun He; Zhengsheng Han; Yuchan Wang; Xiaoyun Li

doi:10.1587/elex.14.20170817

This article has now been updated. Please use the final version.

A RC-IGBT with Built-in Free Wheeling Diode Controlled by MOSFET

Weizhong Chen, Qiao Guo, Lijun He, Zhengsheng Han, Yuchan Wang, Xiaoyun Li

Author information

Keywords: RC-IGBT, FWD, forward conduction, reverse conduction

JOURNAL FREE ACCESS Advance online publication

Article ID: 14.20170817

DOI https://doi.org/10.1587/elex.14.20170817

The final version of this article is now available: Vol. 14 (2017), No. 19 pp. 20170817-20170817

Details

Abstract

A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with integrated Free-Wheeling Diode (FWD) in edge termination region controlled by metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed. The Field Limiting Ring (FLR) of the edge termination acts as the anode and the N-Collector acts as the cathode of the FWD. The MOSFET makes the FLR conduct reverse current at reverse conduction and float at reverse breakdown. Compared with the conventional RC-IGBT, which integrates the FWD in active cell region, the proposed device can eliminate the snapback easily at forward conduction. In addition, the forward voltage drop can be decreased largely.

Corresponding author

Register with J-STAGE for free!