Low-Voltage PV Power Integration into Medium Voltage Grid Using High-Voltage SiC Devices

Ritwik Chattopadhyay; Subhashish Bhattacharya; Nicole C. Foureaux; Igor A. Pires; Helder de Paula; Lênin Moraes; Porfírio C. Cortizio; Sidelmo M. Silva; Braz Cardoso Filho; José A. de S. Brito

doi:10.1541/ieejjia.4.767

IPEC-Hiroshima

Low-Voltage PV Power Integration into Medium Voltage Grid Using High-Voltage SiC Devices

Ritwik Chattopadhyay, Subhashish Bhattacharya, Nicole C. Foureaux, Igor A. Pires, Helder de Paula, Lênin Moraes, Porfírio C. Cortizio, Sidelmo M. Silva, Braz Cardoso Filho, José A. de S. Brito

Author information

Ritwik Chattopadhyay
FREEDM Systems Centre, North Carolina State University, Dept. of ECE Raleigh
Subhashish Bhattacharya
FREEDM Systems Centre, North Carolina State University, Dept. of ECE Raleigh
Nicole C. Foureaux
TESLA Power Engineering, Universidade Federal de Minas Gerais
Igor A. Pires
TESLA Power Engineering, Universidade Federal de Minas Gerais
Helder de Paula
TESLA Power Engineering, Universidade Federal de Minas Gerais
Lênin Moraes
TESLA Power Engineering, Universidade Federal de Minas Gerais
Porfírio C. Cortizio
TESLA Power Engineering, Universidade Federal de Minas Gerais
Sidelmo M. Silva
TESLA Power Engineering, Universidade Federal de Minas Gerais
Braz Cardoso Filho
TESLA Power Engineering, Universidade Federal de Minas Gerais
José A. de S. Brito
COELBA

Keywords: medium voltage grid, PV plant, renewable energy source, SiC. dual active bridge (DAB)

JOURNAL FREE ACCESS

2015 Volume 4 Issue 6 Pages 767-775

DOI https://doi.org/10.1541/ieejjia.4.767

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Abstract

High voltage high power semiconductor devices are being used for grid integration of renewable energy sources. 1200V/100A SiC-MOSFETs, 1700V SiC-MOSFETs, 1700V SiC-Schottky diodes, 10kV SiC-MOSFETs, and 10kV JBS diodes have proved to be useful for high-voltage applications. High-voltage SiC devices enable high-switching frequency operation thus reducing the size of the parasitic element. This paper focuses on an alternative approach to the 0.9MW PV power plant currently being constructed in Brazil. The objective of the use of high power SiC devices for integration of the PV power plant into 13.8kV grid is to provide higher efficiency and reduced size and volume.

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