We recently found dark-brown SnO₂ films were formed in a chemical vapor deposition process under a limited oxygen supplying condition and the nature was investigated in this work. Those films were deposited from SnCl₂ at 350-600°C in a tubular furnace. The films had the rutile-type structure with the significant preferred-orientation along <1 0 0> normal to the substrate surface. Thermogravimetric and elemental analyses revealed that the oxygen deficiency (V_O) and Cl contamination occurred in the films. An as-deposited film at 350°C contained V_O of 1.5 × 10²¹ cm^-3, which corresponded to that about 2.5% was vacant in the O site. On the other hand, Cl was contained at 7.4 × 10²⁰ cm^-3 in the 350°C-prepared film. The Cl concentration decreased with deposition temperature and became 1.8 × 10²⁰ cm^-3 at 600°C. The films showed moderate electric-conductivity and the film deposited at 500°C had the lowest resistivity of 2.5 × 10^-2 Ωcm, where the carrier density and the Hall mobility were 1.3 × 10²⁰ cm^-3 and 2.0 cm² V^-1s^-1, respectively.