We have studied the lithographic performance of resist pattern prepared by supercritical resist drying method. Patterns were exposed by proximity X-ray lithography and the supercritical resist drying was performed with CO₂ by 10 MPa and 60°C. We found that 70-nm-L/S patternswere prepared with the exposure gap of 15 μm, though it had not been ever obtained withoutsupercritical drying. The CD control and line-edge-roughness for those patterns are also measured.