Fabrication of sub-100 nm Patterns using Near-field Mask Lithography with Ultra-thin Resist Process

Toshiki Ito; Masaya Ogino; Tomohiro Yamanaka; Yasuhisa Inao; Takako Yamaguchi; Natsuhiko Mizutani; Ryo Kuroda

doi:10.2494/photopolymer.18.435

Toshiki Ito, Masaya Ogino, Tomohiro Yamanaka, Yasuhisa Inao, Takako Yamaguchi, Natsuhiko Mizutani, Ryo Kuroda

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Keywords: Near-field light, Photolithography, Chemically amplified resist, Tri-layer resist process, Dry etching, Electro-magnetic analysis

JOURNAL FREE ACCESS

2005 Volume 18 Issue 3 Pages 435-441

DOI https://doi.org/10.2494/photopolymer.18.435

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Abstract

A resist pattern of half-pitch (hp) 50 nm, 120 nm deep was fabricated with near-field lithography (NFL) of i-line (&lamda; = 365 nm) using a positive-tone chemically amplified resist and a tri-layer resist process developed for NFL. The experimental results were in close agreement with the numerical results of electro-magnetic analysis using finite-difference time domain (FDTD) method. The possibility of fabricating sub-50 nm patterns was discussed over the numerical results.

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