Process Evaluation of Directed Self-assembly Lithography using Simulation Method based on Self-consistent Field Theory

Katsuyoshi Kodera; Hideki Kanai; Hironobu Sato; Naoko Kihara; Yusuke Kasahara; Katsutoshi Kobayashi; Ken Miyagi; Shinya Minegishi; Toshikatsu Tobana; Tomoharu Fujiwara; Noriyuki Hirayanagi; Yoshiaki Kawamonzen; Tsukasa Azuma

doi:10.2494/photopolymer.27.31

Katsuyoshi Kodera, Hideki Kanai, Hironobu Sato, Naoko Kihara, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Toshikatsu Tobana, Tomoharu Fujiwara, Noriyuki Hirayanagi, Yoshiaki Kawamonzen, Tsukasa Azuma

Author information

Katsuyoshi Kodera
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Hideki Kanai
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Hironobu Sato
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Naoko Kihara
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Yusuke Kasahara
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Katsutoshi Kobayashi
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Ken Miyagi
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Shinya Minegishi
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Toshikatsu Tobana
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Tomoharu Fujiwara
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Noriyuki Hirayanagi
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Yoshiaki Kawamonzen
DSA Research Dept., EUVL Infrastructure Development Center, Inc.
Tsukasa Azuma
DSA Research Dept., EUVL Infrastructure Development Center, Inc.

Keywords: directed self-assembly, lithography, self-consistent field theory, chemoepitaxial DSA, graphoepitaxial DSA

JOURNAL FREE ACCESS

2014 Volume 27 Issue 1 Pages 31-36

DOI https://doi.org/10.2494/photopolymer.27.31

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Abstract

We have investigated the process margin for fabrication of line/space directed self-assembled (DSA) patterns using a simulation method based on self-consistent field theory. We studied three systems, namely, chemoepitaxial DSA using lamellar-forming block copolymers (BCPs), graphoepitaxial DSA using lamellar-forming BCPs, and graphoepitaxial DSA using cylindrical BCPs. In the case of the chemoepitaxial DSA, both the subtle change of the wetting condition and the topography of the prepattern surface were found to strongly affect the process margin of the pinning layer width. In the case of the graphoepitaxial DSA using cylindrical BCPs, both the pattern pitch and CD of the forming DSA cylindrical patterns were found to intensely depend on both the trench width and the film thickness of the BCPs.

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