Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance

Karam CHO; Jaesung JO; Changhwan SHIN

doi:10.1587/transele.E99.C.544

IEICE Transactions on Electronics

Online ISSN : 1745-1353
Print ISSN : 0916-8524

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance

Karam CHO, Jaesung JO, Changhwan SHIN

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Keywords: negative capacitance, subthreshold slope, a-IZO, TFT

JOURNAL RESTRICTED ACCESS

2016 Volume E99.C Issue 5 Pages 544-546

DOI https://doi.org/10.1587/transele.E99.C.544

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Abstract

A negative capacitor is fabricated using poly(vinylidene fluoride-trifluoroethylene) copolymer and connected in series to an a-IZO TFT. It is experimentally demonstrated that the negative capacitance of the negative capacitor can create steep switching in the a-IZO TFT (e.g., a subthreshold slope change from 342mV/decade to 102mV/decade at room-temperature).

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