1991 Volume 7 Issue Supple Pages 1211-1214
We have observed a negative shift of the CuInSe2 valence band maximum in x-ray photoemission along with the conduction type conversion from p- to n-type induced by the decrease of Cu/In ratio of molecular beam deposited thin films. The Cu rich films showed low-resistivity and p-type conduction. The near stoichiometric films showed intermediate-resistivity and n-type conduction. The In rich films showed high-resistivity and n-type conduction. The electron diffraction pattern revealed that the films had the tetragonal chalcopyrite structure. No additional second phase was detected in the films.