Analytical Sciences
Online ISSN : 1348-2246
Print ISSN : 0910-6340
ISSN-L : 0910-6340
STUDY ON DAMAGES IN ION-IMPLANTED Si USING TRANSIENT REFLECTING GRATINGS
HIROYUKI NISHIMURAAKIRA HARATATSUGUO SAWADA
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1991 Volume 7 Issue Supple Pages 1235-1236

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Abstract

The transient reflecting grating method has been used to characterize ion-implanted silicon layers. The signal intensity and relaxation constant were measured as functions of ion dose. The results suggested that damage induced by ion-implantation suppresses thermal diffusion even under a light dose condition.

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© The Japan Society for Analytical Chemistry
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