ELECTROTHERMAL VAPORIZATION ICP-MS(ETV-ICP-MS) DETERMINATION OF IMPURITIES IN PHOTORESIST FOR VERY LARGE SCALE INTEGRATED CIRCUIT(VLSI)

Abstract

A method was developed for the determination of Na, Fe, Mn, Ni and Cu in photoresist for VLSI by ETV-ICP-MS. Photoresist samples were diluted 10 times with an ethoxy ethyl acetate (EEA) The standard addition method was used for the determination of impurities. Ashing temperature, vaporization temperature and carrier gas flow rate were optimized for impurities and some molecular ions in the photoresist. The analytical results obtained were in good agreement with those obtained by graphite furnace atomic absorption spectrometry (GFAAS). The detection limits of Na and Fe in photoresist were 0.06ppb 0.2ppb respectively.