Analytical Sciences
Online ISSN : 1348-2246
Print ISSN : 0910-6340
ISSN-L : 0910-6340
ANALYSIS OF PRESSURE EFFECT ON THE GROWTH OF CdTe BY MOCVD
KAN-SEN CHOUYU-HUA LEEHSIN-CHEN LIU
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Keywords: pressure effect, CdTe, MOCVD
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1991 Volume 7 Issue Supple Pages 1271-1274

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Abstract

The effects of growth pressure on the properties of CdTe epilayers obtained from a horizontal MOCVD reactor was investigated in this work. Items studied included: growth rate variation, orientation on (100)GaAs substrate, full width at half maximum from DCRC, low temperature PL spectra and Hall measurements. Our results indicated that an intermediate growth pressure such as 300-400 torr may produce the best quality CdTe films.

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© The Japan Society for Analytical Chemistry
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