SURFACE ANALYSIS OF METALS AND SEMICONDUCTORS UNDER AIR ATMOSPHERE BY ULTRAVIOLET PHOTOELECTRON YIELD SPECTROSCOPY

Abstract

Ultraviolet photoelectron yield(UPY) spectra of silicon wafers with various thickness surface oxide were measured in air Photoelectron threshold energy E_t and photoelectron yield Y were obtained from the UPY spectra. The E_t values were greater for Si wafer with thicker oxide. The attenuation length of the very low energy electron (<1.3eV) in the oxide layer has been estimated from the dependence of Y on the oxide thickness to be about 15Å.