RBS INVESTIGATION OF DEPTH PROFILE OF NITROGEN IMPLANTED INTO CHROMIUM SURFACE WITH ENERGIES OF 500 AND 1000keV

Abstract

With the aim of making thick nitride layer, Cr metal plates(>99.99%) were implanted with nitrogen ions(N2⁺) at energies of 500 and 1000keV to the dose from 3×10¹⁷ to 10¹⁸N atoms/cm²- The depth profile of nitrogens was investigated by means of Rutherford Backscattering Spectrometry (RBS). After annealing at 800°C for one hour. the Cr₂N layer with a trapezoidal profile was obtained. The maximum thickness obtained was ca. 3000A at the depth of 800A(500keV) and 2000A (1MeV) with the dose of 10¹⁸N atoms/cm². The thickness was four times as large as that found in 90keV implantation.