電動粒子の散乱を考慮した場合の半導体のホール係数と比抵抗の関係
1956 年 1956 巻 97 号 p. 109-116
詳細
1956 年 1956 巻 97 号 p. 109-116
Jones has given an expression for the Hall coefficient of semiconductors taking into account both thermal and ionized impurity scattering of electrons (or holes) in a band. As temperature decreases the influence caused by neutral impurity scattering and dislocation scattering becomes appreciable. Taking into consideration every two scattering mechanisms out of four mechanisms mentioned above, the relations between Hall coefficient and resistivity are calculated in analogous way to that of Jones.
