Butsuri
Online ISSN : 2423-8872
Print ISSN : 0029-0181
ISSN-L : 0029-0181
TMR Effect and Resonant Tunneling in Magnetic Tunnel Junctions
Shinji YuasaTaro NagahamaYoshishige SuzukiEiichi Tamura
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2003 Volume 58 Issue 1 Pages 38-42

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Abstract

Since the discoveries of large magnetoresistance effects in magnetic multilayers and magnetic tunnel junctions, a new field of electronics named spintronics, which makes use of both the electric charge and the spin of electrons in solids, has been developing rapidly. In this paper, we review the tunnel magnetoresistance (TMR) effect, which is one of the most important topics in spintronics. We also report our recent study on resonant tunneling effect in spinpolarized systems.

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© The Physical Society of Japan
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