Improvement of computing speed using exact solutions for deposition profiles in various CVD reactors

Abstract

Chemical Vapor Deposition (CVD) is the major process of semiconductor device fabrication. In order to analyze CVD process at both low cost and high speed, we introduced the novel calculation method to reproduce the deposition profiles of the CVD processes. We adopted three type of reactors, that is, the batch type reactor with round-shaped substrates, the tubular reactor and the substrates with trench. The deposition profiles of the reactors can be obtained from the exact solutions of solving mass balance equations. The calculation speed was greatly improved, with the same calculation accuracy as the conventional calculation method, which is performed by the iteration of numerical integrations. Moreover, by implementing the exact solution of the deposition rate distribution, we could analyze various types of CVD reactors at high speed and with high accuracy.