Chemistry Letters
Online ISSN : 1348-0715
Print ISSN : 0366-7022
ISSN-L : 0366-7022
Redox-Induced cistrans Isomerisation of Bis(porphyrinyl)ethenes: A Possible Basis for a Molecular Memory Element?
Dennis P. ArnoldVictor V. BorovkovGelii V. Ponomarev
Author information
JOURNAL RESTRICTED ACCESS

1996 Volume 25 Issue 6 Pages 485-486

Details
Abstract

trans-1,2-Bis(octaethylporphyrin-5-yl)ethene free base and its dinickel(II) complex exhibit narrow electrochemical band gaps (1.44 and 1.49 eV, respectively) and broad, solvent-dependent absorption bands at low energy, whilst the corresponding cis isomers undergo rapid redox-induced cistrans isomerisation.

Information related to the author

This article cannot obtain the latest cited-by information.

© 1996 The Chemical Society of Japan
Previous article Next article
feedback
Top