Chemistry Letters
Online ISSN : 1348-0715
Print ISSN : 0366-7022
ISSN-L : 0366-7022
Modulation of Flat-band Potential and Increase in Photovoltage for n-Si Electrodes by Formation of Halogen Atom Terminated Surface Bonds
Morio FujitaniReiko HinogamiJ. G. JiaMasaki IshidaKazuhiko MorisawaShinji YaeYoshihiro Nakato
Author information

1997 Volume 26 Issue 10 Pages 1041-1042


The flat-band potential (UFB) of n-Si electrodes in concentrated hydrogen halide (HX) solutions, as determined from Mott-Schottky plots and the onset potential of photocurrent, shifts largely toward the negative with the decreasing electronegativity of halogen atoms. XPS studies have shown the presence of halogen atoms on the Si electrodes which were beforehand immersed in the HX solutions. The shift in UFB can be explained as due to changes in surface potential by formation of Si-halogen surface termination bonds.

Information related to the author

This article cannot obtain the latest cited-by information.

© 1997 The Chemical Society of Japan
Previous article Next article