1997 Volume 26 Issue 10 Pages 1041-1042
The flat-band potential (UFB) of n-Si electrodes in concentrated hydrogen halide (HX) solutions, as determined from Mott-Schottky plots and the onset potential of photocurrent, shifts largely toward the negative with the decreasing electronegativity of halogen atoms. XPS studies have shown the presence of halogen atoms on the Si electrodes which were beforehand immersed in the HX solutions. The shift in UFB can be explained as due to changes in surface potential by formation of Si-halogen surface termination bonds.
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