Chemistry Letters
Online ISSN : 1348-0715
Print ISSN : 0366-7022
ISSN-L : 0366-7022
Letter
Effect of Anions on Bipolaron Formation in Ionic-liquid-gated Transistors Fabricated with Poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C16)
Ippei EnokidaYukio Furukawa
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2019 Volume 48 Issue 5 Pages 498-501

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Abstract

The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12 mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP impeded the bipolaron formation even at a high doping level.

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© 2019 The Chemical Society of Japan
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