Injected Charge Modulation Using Magnetic Filtering Effect in Au/Cr₂O₃FeCr/CeO₂/Si Capacitor

Abstract

We investigated the influence of an external magnetic field for the carrier injection process of a metal (Au)/insulator (Cr₂O₃/FeCr/CeO₂)/semiconductor (Si) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the CeO₂ layer from Si were injected into the FeCr or an oxygen deficiency layer formed around the FeCr layer. When a magnetic field was applied, the hysteresis window width of this capacitor was increased. I-V curve analyses under a magnetic field revealed that this increases was more likely due to the magnetic state of the FeCr layer. [DOI: 10.1380/ejssnt.2013.122]