2026 Volume 24 Issue 2 Pages 40-50
With the increasing importance of topological materials in optoelectronic devices, the development of efficient and stable topological materials has become a research hotspot. To provide theoretical support for the design of functional optoelectronic devices, this study proposes a localized angular state (LAS) implementation scheme for T-shaped graphene that considers dipole-dipole interactions (DDI) and optical field distribution. This scheme adopts the non-equilibrium Green’s function recursive method to calculate the electronic transport properties and clarify the electronic structural basis required for local angular states. It introduces high-order topological concepts and proposes vacancy defect control strategies, directly achieving precise localization and migration of angular states. In addition, a photonic crystal system is constructed to utilize DDI to verify the optical feasibility of LASs. The results showed that the conductivity peak of armchair T-shaped graphene reached 6.8 at a 90°, and the density peak at a 60° was about 0.25 states eV−1. When the vacancy defect density was 15 %, the light field intensity reached a peak of 3.2/3.1 a.u., with 4 LASs and a stability score of 9. This study validates the optical feasibility of high-order topological non-trivial phases and LASs, providing new ideas for the development of topological materials and the design of optoelectronic devices.
