2008 Volume 6 Pages 7-10
A way of nuclear spin manipulation using an interface of diluted magnetic semiconductors (DMSs) is proposed. The hyperfine field at an impurity site in the interface of a DMS and a base substance can be controlled by applying the external electric field. It is because that the electric field changes the spin density of carriers in the s state at the impurity site. On the basis of first-principles electronic structure calculation, we investigated the electric-field dependence of the hyperfine field at the impurity site. We show that the hyperfine field is dramatically changed by an external electric field when no clear magnetic impurity band is formed in the band gap. [DOI: 10.1380/ejssnt.2008.7]
