Axial Growth Mechanism of Silicon Fibrous Whiskers

Abstract

Silicon fibrous whiskers were grown by the thermal decomposition of SiH₄ on a silicon substrate contaminated by dust in room air. The axial growth mechanism of the whisker is as follows. During the growth of the whisker, dislocations occur in the 〈110〉 direction inside the single crystalline pith of the whisker and the whisker grows in the 〈110〉 direction due to the growth mechanism involved with these dislocations.