Characterization of Vapor-Deposited Acenaphtho[1,2-k]fluoranthene Derivative Films as Active Layers of Organic Field-Effect Transistors

抄録

We have developed vapor-deposited films of acenaphtho[1,2-k] fluoranthene (AF) and their 7,14-dicarbalkoxy derivatives as active layers of organic field-effect transistors (OFETs). The AF- and 7,14-dicarbmethoxyacenaphtho[1,2-k] fluoranthene (DMAF)-based OFET devices did not work sufficiently. On the other hand, the 7,14-carbethoxyacenaphtho[1,2-k] fluoranthene (DEAF)-based OFET device showed typical p-channel FET responses with a field-effect mobility of 1.7×10⁻³ cm² V⁻¹ s⁻¹ and a current on/off ratio of about 10². According to the X-ray diffraction measurements, the carbethoxy groups could largely improve the molecular packing that is favorable for high-performance OFETs.