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Electrochemistry
Vol. 76 (2008) No. 2 P 144-146

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http://doi.org/10.5796/electrochemistry.76.144

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Pd-particle-modified n-Si can be etched at a high rate in a hydrofluoric acid solution without a particular oxidizing agent under dissolved oxygen free and dark conditions. In this study, Pd thin film patterned n-Si is used. The etching is localized at the boundary between the 29-nm-thick-Pd film and the non-Pd-deposited area of the n-Si surface at the initial stage. Then Pd particles form on the non-Pd-deposited area toward which the etched area extends. Thin (4.3 nm) Pd films localize the etching under the films.

Copyright © 2008 The Electrochemical Society of Japan

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