2009 年 77 巻 11 号 p. 951-955
In recent decades, a Ba1−xSrxTiO3 film has been developed as a dielectric film for many electronic devices. In this work, we focused on an electrophoretic deposition method as a film-forming process, and prepared Ba1−xSrxTiO3 (x=0∼0.3) films by the method using dispersed Ba1−xSrxTiO3 slurries as the bath. As a result, it was found that the film thickness depended on the deposition voltage and time, and homogeneous film with a few µm of thickness could be obtained even with an electrophoretic deposition method by using the slurries. We also studied dielectric properties of the films after sintering. From the results, it was demonstrated that Ba0.9Sr0.1TiO3 film, which was deposited for 4 sec at 80 V and then heat-treated at 1000°C for 15 min under N2 flow, had 2.6 µm of a thickness, and exhibited 162 nF·cm−2 of a capacitance density, 476 of a dielectric constant, 3.4% of a dielectric loss and 3.96×10−8 A·cm−2 of a leak current.