Electrochemistry
Online ISSN : 2186-2451
Print ISSN : 1344-3542
ISSN-L : 1344-3542
技術報文
三次元LSIチップ間配線技術
栗田 洋一郎本橋 紀和松井 聡副島 康志天川 修平益 一哉川野 連也
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2009 年 77 巻 9 号 p. 812-817

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We have developed a new Die-to-Wafer (D2W) bonding process for a 3-D packaging technology called SMAFTI (SMArt chip connection with FeedThrough Interposer), which enables over a thousand parallel interconnects between memory and logic dies. The bonding process achieved metal/adhesive simultaneous bonding between die and wafer. We also characterized the interlaminar horizontal wiring of FTI (Feed Through Interposer) by Sparameter measurement and confirmed its potential for high frequency transmission at over 10 GHz.

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© 2009 公益社団法人 電気化学会
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