Electrochemistry
Online ISSN : 2186-2451
Print ISSN : 1344-3542
ISSN-L : 1344-3542
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Pulse Electrodeposition of CuO Thin Films to Improve Crystallinity for the Enhancement of Photoelectrochemical Response
笹野 順司本村 賢次郎永井 美帆Fariza Binti MOHAMAD伊崎 昌伸
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2011 年 79 巻 10 号 p. 831-837

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Pulse electrodeposition of p-type CuO semiconductor films for the light absorption layer of photovoltaic cells was conducted. Shapes of the potential pulse affected the crystallinity of CuO films. X-ray diffraction (XRD) spectra of all the CuO films among this study showed (002) orientation through the heteroepitaxial growth on the (111)-oriented Au substrates. The CuO layer formed with the most favorable pulse condition showed a sharp diffraction peak assigned to (002) plane of CuO with 0.20° of full width at half maximum (FWHM) value, in contrast to that of the CuO film potentiostatically deposited at 850 mV vs. Ag/AgCl being 0.46°. The FWHM values indicated that the pulse-deposited CuO film had much better crystallinity and contained less residual stress induced by electrodeposition than the potentiostatically deposited CuO. Photocurrent of the pulse-deposited CuO film in NaOH solution was greater than that of the potentiostatically deposited CuO. This enhancement in photoresponse was considered to be due to the high crystallinity of pulse-deposited CuO.

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© 2011 The Electrochemical Society of Japan
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