Electrochemistry
Online ISSN : 2186-2451
Print ISSN : 1344-3542
ISSN-L : 1344-3542
Articles
Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry
Wei LUOJunhong ZHANGZhipeng CHENYing ZHULiming GAOMing LI
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JOURNALS OPEN ACCESS

2016 Volume 84 Issue 7 Pages 516-522

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Abstract

A model for copper electrodeposition of Through-Silicon vias (TSV) is proposed based on the competitive adsorption of additives, with special emphasis on the potential drop caused by additives adsorption. The model is applicable for 2-component (accelerator and suppressor) copper plating chemistries with different concentration of accelerator. Numerical simulation is performed for the partially filling of 20 µm (diameter) × 90 µm (height) vias. Simulated copper profiles and the corresponding dependencies on potential drop are confronted with existing experimental results which were linked to potential range of small peak in Linear Sweep Voltammetry (LSV) curves.

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© 2016 The Electrochemical Society of Japan
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