2016 Volume 84 Issue 7 Pages 516-522
A model for copper electrodeposition of Through-Silicon vias (TSV) is proposed based on the competitive adsorption of additives, with special emphasis on the potential drop caused by additives adsorption. The model is applicable for 2-component (accelerator and suppressor) copper plating chemistries with different concentration of accelerator. Numerical simulation is performed for the partially filling of 20 µm (diameter) × 90 µm (height) vias. Simulated copper profiles and the corresponding dependencies on potential drop are confronted with existing experimental results which were linked to potential range of small peak in Linear Sweep Voltammetry (LSV) curves.