Electrochemistry
Online ISSN : 2186-2451
Print ISSN : 1344-3542
Articles
Purity and Minority Carrier Lifetime in Silicon Produced by Direct Electrolytic Reduction of SiO2 in Molten CaCl2
Ming ZHONGKouji YASUDATakayuki HOMMAToshiyuki NOHIRA
著者情報
キーワード: Electrolysis, Molten Salt, Silicon, Purity
ジャーナル オープンアクセス

2018 年 86 巻 2 号 p. 77-81

詳細
抄録

Si powder was produced by direct electrolytic reduction of SiO2 in molten CaCl2 at 1123 K. From the Si powder, Si ingots were obtained by a floating zone method. The concentrations of most metallic elements and of P in the Si ingots were lower than the acceptable levels for solar grade Si. The minority carrier lifetimes in the Si ingots were measured using a microwave photo conductivity decay method. The obtained values of ca. 1.0 µs were two orders of magnitude shorter than those observed in an Si ingot prepared from 10N purity Si.

著者関連情報
© 2018 The Electrochemical Society of Japan
前の記事 次の記事
feedback
Top