IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
A compact quadrature coupler on GaAs IPD process for LTE applications
Hamhee JeonNam Young Kim
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2013 Volume 10 Issue 13 Pages 20130386

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Abstract

A compact quadrature coupler — using intertwined mutual inductors by the proposed GaAs integrated passive device (IPD) process — is developed by considering the quality factor of inductor and minimum insertion loss for the long term evolution (LTE) applications. At the center frequency of LTE bands 5 and 8, the quadrature coupler achieved −3.45dB of insertion loss S21 and −3.43dB of coupling S41 with less than 0.65 degrees of phase error over the frequency range. The reflection coefficient S11 and the isolation S31 are −24.32dB and −23.45dB, respectively. This coupler can be usable for a compact quadrature 3-dB divider/combiner as partial component of a balanced power amplifier.

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© 2013 by The Institute of Electronics, Information and Communication Engineers
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