Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

Abstract

Terahertz oscillators using AlAs/InGaAs resonant tunneling diodes with deep and thin quantum wells are reported. Although a thin well has been shown to be effective for high-frequency oscillation until now due to a reduced electron dwell time, it caused an increase in bias voltage. We introduce a deep well with indium-rich InGaAs to maintain or even to reduce the bias voltage. Current-voltage and oscillation characteristics are compared between the quantum wells with 3.5-nm-thick In_0.8Ga_0.2As and 3-nm-thick In_0.9Ga_0.1As. The highest oscillation frequency was 0.96THz for the former while 1.27THz for the latter without increase in bias voltage.