Abstract
Different from the conventional way to investigate the coupling between adjacent TSVs, we take the discharging path into consideration as the impedance of silicon substrate is actually finite. This paper first analyzes the discharging path which exists between the victim TSV and the silicon substrate, and then by transforming the tapped capacitor circuit into a RC parallel circuit for the discharging path, the frequency-dependent expressions of the parasitic elements in the discharging path are obtained. Furthermore, we vary the impedance of silicon substrate to evaluate the impact of discharging path on the coupling noise. Through simulations, it indicates that the coupling noise on the victim can be reduced significantly by lowering the impedance of discharging path.
