A physical model of electron trapping/detrapping in electrically stressed oxide

抄録

A physical model of electron trapping/detrapping in electrically stressed oxide has been proposed in this paper. The new model is based on both inelastic multi-phonon trap-assisted tunneling and thermal emission, and also considers the capture effect of oxide bulk traps. It handles every trap separately, and establishes the dynamic procedure of traps capture and emission of electrons. Finally, through the proposed model we may accurately and effectively obtain the filling state of all the oxide traps at any stress and any time, which is very useful for the modeling of the endurance and data retention characteristics of floating gate nonvolatile memories.