IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Enhanced read performance for phase change memory using a reference column
Yu LeiHoupeng ChenXi LiQian WangQi ZhangJiajun HuXiaoyun LiZhen TianZhitang Song
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JOURNALS FREE ACCESS

2017 Volume 14 Issue 5 Pages 20170032

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Abstract

A reference column is employed to improve the read performance of phase change memory (PCM). In this way, a changeable reference current replaces the constant one; both the reference cell and the selected cell have the same bit line (BL) parasitic parameters and read transmission gate parasitic parameters in the read operation. Simulated in a 40 nm CMOS process, read access time of 4-Mb PCM is 30.65 ns with 190.9 ns improvement. Monte Carlo simulations show a 80.5 ns worst read access time compared to the conventional 1.58 µs.

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© 2017 by The Institute of Electronics, Information and Communication Engineers
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