IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
A class E GaN microwave power amplifier accounting for parasitic inductance of transistor
Chuicai RongXiansuo LiuYuehang XuMingyao XiaRuimin XuTiedi Zhang
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2017 Volume 14 Issue 8 Pages 20170127

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Abstract

The effects of parasitic inductance of transistor on finite dc-feed inductance type class E microwave power amplifier is analyzed in this letter. We find that the frequency bandwidth can be improved by fully consideration of the output parasitic inductance of transistor. To validate the method, a GaN power amplifier by using the proposed topology is designed for demonstration purpose. Experimental results show that the amplifier is realized from 2.5 GHz to 3.5 GHz (33.3%) with measured drain efficiency larger than 60%, which show good agreement with the simulated results.

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© 2017 by The Institute of Electronics, Information and Communication Engineers
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