IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
A novel highly reliable and low-power radiation hardened SRAM bit-cell design
Dianpeng LinYiran XuXiaonian LiuWenyi ZhuLihua DaiMengying ZhangXiaoyun LiXin XieJianwei JiangHuilong ZhuZhengxuan ZhangShichang Zou
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2018 Volume 15 Issue 3 Pages 20171129

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Abstract

In this paper, an improved SEU hardened SRAM bit-cell, based on the SEU physics mechanism and reasonable circuit-design, is proposed. The proposed SRAM cell can offer differential read operation for robust sensing. By using 90 nm standard digital CMOS technology, the simulation results show that the SRAM cell can provide full immunity for single node upset and multiple-node upset. And its critical charge is 25 times compared with Quatro10T. Besides, by comparing several electrical parameters, the proposed SRAM cell has the highly reliable and low-power capability for severe radiation environment application.

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© 2018 by The Institute of Electronics, Information and Communication Engineers
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