A high voltage diode with partial n⁺ adjusting region embedded at the anode side

Abstract

A novel high voltage diode featuring partial n⁺ adjusting region embedded at the anode side is proposed and analyzed by device simulation in this paper. The low and inverted on-state carrier profile is obtained to realize the fast and soft recovery behavior. The simulations show that the proposed diode achieves a 21% reduction in the reverse peak current density compared with the conventional diode. What’s more, such partial n⁺ adjusting region results in the parasitic npn transistor triggered during reverse recovery, and electrons are injected into the pn⁻ junction to inhibit the peak electric field, improving the dynamic ruggedness.