2021 年 18 巻 14 号 p. 20210237
In this paper, the degradation of low-frequency (LF) noise under different RF stress conditions in nMOSFETs has been reported and compared with the conventional DC stress condition. LF noise increases after RF stress and the increment of noise under RF stress at a large Vgs value is bigger than that caused by DC stress. The change in LF noise intensity under RF stress raised more rapidly at large Vgs values than that at small Vgs values, which are contradictory to LF noise performance after DC stress. The influence of the input power and frequency of stress on LF noise has also been investigated separately. As the stress input power or frequency increases, the increment of noise intensity rises as well. The γ decreases as the growth of the stress input power or frequency, and the values of γ are below 1 after 18 GHz RF stress. The results provide experimental verification that the interface traps generated by RF stress play a major role in the degradation of LF noise.