IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Theoretical analysis of continuous-wave Raman gain/lasing in silicon wire waveguides without carrier extraction scheme
Tak-Keung LiangLuis-Romeu NunesHon-Ki TsangMasahiro Tsuchiya
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2005 Volume 2 Issue 16 Pages 440-445

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Abstract

Stimulated Raman scattering in silicon waveguides are attractive for optical amplification/lasing due to high Raman coefficient and high optical pump intensity in the small waveguide core. In this paper, we investigate the effect of two-photon absorption and free-carrier absorption for continuous-wave light propagation in submicron size silicon wire waveguides. We also show that if the waveguide lengths and pump powers are optimized, the net continuous-wave Raman gain and thus lasing activities in such waveguides without any additional free carrier extraction schemes is possible.

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© 2005 by The Institute of Electronics, Information and Communication Engineers
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