IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
SAW characteristics of GaN layers with surfaces exposed by dry etching
Kazumi NishimuraNaoteru ShigekawaHaruki YokoyamaMasanobu HirokiKohji Hohkawa
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2005 Volume 2 Issue 19 Pages 501-505

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Abstract

We evaluated the possibility of monolithic integration of electron devices and surface acoustic wave (SAW) devices on GaN. We removed top n+ GaN layers of n+ GaN/unintentionally-doped GaN structures by inductively coupled plasma (ICP) etching and fabricated SAW filters on the exposed unintentionally doped GaN layers. We found that the device characteristics are almost the same as those of devices fabricated on as-grown GaN layers, although the surface morphology of GaN layers is degraded due to the ICP etching. The results indicate that SAW devices and electron devices can be monolithically integrated on GaN-based semiconductor structures.

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© 2005 by The Institute of Electronics, Information and Communication Engineers
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