Chemical flip-chip bonding method for fabricating 10-µm-pad-pitch interconnect

Abstract

A flip-chip bonding method has been developed for fabricating ultrafine-pitch pad-to-pad interconnects. The method utilizes the preferential growth of Ni-B bridge layers on resin walls in a microscale cavity structure fabricated in the underfill resin between copper pads facing each other under some conditions of electroless Ni-B plating. In this method, the interconnect can be fabricated without loading and/or heating. By controlling the growth of the bridge layer on the resin walls in the microscale cavity under optimized plating conditions, the feasibility of ultrafine-pitch flip-chip bonding with a 10-µm pad pitch is experimentally demonstrated at a temperature of 60°C.